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NXP Semiconductors
HF full bridge driver IC
Additional application information
G ATE RESISTORS
At ignition of an HID lamp, a large EMC spark occurs. This
can result in a large voltage transient or oscillation at the
gates of the full bridge MOSFETs (LL, LR, HR and HL).
When these gates are directly coupled to the gate drivers
(pins GHR, GLR, GHL and GLL), voltage overstress of the
driver outputs may occur. Therefore it is advised to add a
resistor with a minimum value of 100 Ω in series with each
gate driver to isolate the gate driver outputs from the actual
power MOSFETs gate.
’Dead time’ can also be adjusted via the combination gate
resistor and gate-source capacitance.
2002 Oct 08
12
Product specification
UBA2033
G ATE CHARGE AND SUPPLY CURRENT AT HIGH FREQUENCY
USE
The total gate current needed to charge the gates of the
power MOSFETs equals:
I gate = 4 × f bridge × Q gate
Where:
I gate = gate current
f bridge = bridge frequency
Q gate = gate charge.
This current is supplied via the internal low voltage supply
(V DD ). Since this current is limited to 11 mA (see
“Characteristics” table note 1), at higher frequencies and
with MOSFETs having a relative high gate charge, this
maximum V DD supply current may not be sufficient
anymore. As a result the internal low voltage supply (V DD )
and the gate drive voltage will drop resulting in an increase
of the higher resistance (R on ) of the full bridge MOSFETs.
In this case an auxiliary low voltage supply is necessary.
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